Fairchild Semiconductor FDD6680 overview
Fairchild Semiconductor Corporation FDD6680 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN ...
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Manufactured byFairchild Semiconductor
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DescriptionFairchild Semiconductor Corporation FDD6680 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:2,DS Breakdown Voltage-Min:30 V,Number of Elements:1,Drain Current-Max (Abs) (ID):55 A,Drain Current-Max (ID):12 A,Drain-source On Resistance-Max:10 m?
DescriptionFAIRCHILD SEMICONDUCTOR FDD6680. MOSFET Transistor Polarity:N Channel Continuous Drain Current, Id:56A On-Resistance, Rds(on):0.0095ohm Package/Case:TO-252 Drain Source On Resistance @ 10V:17ohm Drain Source On Resistance @ 4.5V:0.011ohm RoHS Compliant: No
DescriptionFairchild Semiconductor FDD6680 Semiconductors
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| # | Name |
|---|---|
| 1 | FDD6680. |