Fairchild Semiconductor IRLM220ATF overview
Fairchild Semiconductor Corporation IRLM220ATF Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-...
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Manufactured byFairchild Semiconductor
Product groupModules
DescriptionFairchild Semiconductor Corporation IRLM220ATF Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:4,DS Breakdown Voltage-Min:200 V,Number of Elements:1,Drain Current-Max (Abs) (ID):1.13 A,Drain Current-Max (ID):1.13 A,Drain-source On Resistance-Max:800 m?
DescriptionFAIRCHILD SEMICONDUCTOR IRLM220ATF N-CH/LL/200V/1.13A/0.8OHM@VGS=5V RoHS Compliant: Yes
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