Fairchild Semiconductor IRF820B overview
Fairchild Semiconductor Corporation IRF820B Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN D...
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Manufactured byFairchild Semiconductor
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DescriptionFairchild Semiconductor Corporation IRF820B Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:3,DS Breakdown Voltage-Min:500 V,Number of Elements:1,Drain Current-Max (Abs) (ID):2.5 A,Drain Current-Max (ID):2.5 A,Drain-source On Resistance-Max:2.6 ?
DescriptionFAIRCHILD SEMICONDUCTOR IRF820B RAIL / 500V N-Channel B-FET / Substitute of IRF820 & IRF820A RoHS Compliant: Yes
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