Fairchild Semiconductor IRF610B_FP001 overview
Fairchild Semiconductor Corporation IRF610B_FP001 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUIL...
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Manufactured byFairchild Semiconductor
Product groupModules
DescriptionFairchild Semiconductor Corporation IRF610B_FP001 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:3,DS Breakdown Voltage-Min:200 V,Number of Elements:1,Drain Current-Max (Abs) (ID):3.3 A,Drain Current-Max (ID):3.3 A,Drain-source On Resistance-Max:1.5 ?
DescriptionFAIRCHILD SEMICONDUCTOR IRF610B_FP001 RAIL / 200V N-Channel B-FET / Substitute of IRF610 & IRF610A RoHS Compliant: Yes
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