Fairchild Semiconductor HUF75823D3ST overview
Fairchild Semiconductor Corporation HUF75823D3ST Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUIL...
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Manufactured byFairchild Semiconductor
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DescriptionFairchild Semiconductor Corporation HUF75823D3ST Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:2,DS Breakdown Voltage-Min:150 V,Number of Elements:1,Drain Current-Max (Abs) (ID):14 A,Drain Current-Max (ID):14 A,Drain-source On Resistance-Max:150 m?
DescriptionFAIRCHILD SEMICONDUCTOR HUF75823D3ST PWR MOS ULTRAFET 150V/14A/.0150 OHMS N-CH TO-252AA T & R
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