Fairchild Semiconductor HUF75631SK8 overview
Fairchild Semiconductor Corporation HUF75631SK8 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT...
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Manufactured byFairchild Semiconductor
Product typePassive
DescriptionFairchild Semiconductor Corporation HUF75631SK8 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:8,DS Breakdown Voltage-Min:100 V,Number of Elements:1,Drain Current-Max (Abs) (ID):5.5 A,Drain Current-Max (ID):5.5 A,Drain-source On Resistance-Max:39 m?
DescriptionFAIRCHILD SEMICONDUCTOR HUF75631SK8 RAIL / PWR MOS ULTRAFET 100V5.5A/0.039 OHM N-CH RoHS Compliant: Yes
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