Fairchild Semiconductor HGT1S7N60A4DS overview
Fairchild Semiconductor Corporation HGT1S7N60A4DS IGBT, Collector-Emitter Voltage-Max:600 V, Gate-Emitter Thr Voltage-Max:7 V, Collector Current-Max (IC):34 A, ...
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Manufactured byFairchild Semiconductor
Product groupModules
DescriptionFairchild Semiconductor Corporation HGT1S7N60A4DS IGBT, Collector-Emitter Voltage-Max:600 V, Gate-Emitter Thr Voltage-Max:7 V, Collector Current-Max (IC):34 A, Polarity/Channel Type:N-CHANNEL, Surface mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, Number of Elements:1
DescriptionFAIRCHILD SEMICONDUCTOR HGT1S7N60A4DS RAIL / 600V,
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