Fairchild Semiconductor FQU12N20LTU overview
Fairchild Semiconductor Corporation FQU12N20LTU Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-...
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Manufactured byFairchild Semiconductor
Product groupModules
DescriptionFairchild Semiconductor Corporation FQU12N20LTU Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:3,DS Breakdown Voltage-Min:200 V,Number of Elements:1,Drain Current-Max (Abs) (ID):9 A,Drain Current-Max (ID):9 A,Drain-source On Resistance-Max:320 m?
DescriptionFAIRCHILD SEMICONDUCTOR FQU12N20LTU N-CH/LL/200V/9A/0.28OHM@VGS=10V/0.32OHM@VGS=5V
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