Fairchild Semiconductor FQI17P10TU overview
Fairchild Semiconductor Corporation FQI17P10TU Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-I...
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Manufactured byFairchild Semiconductor
Product groupModules
DescriptionFairchild Semiconductor Corporation FQI17P10TU Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:3,DS Breakdown Voltage-Min:100 V,Number of Elements:1,Drain Current-Max (Abs) (ID):16.5 A,Drain Current-Max (ID):16.5 A,Drain-source On Resistance-Max:190 m?
DescriptionFAIRCHILD SEMICONDUCTOR FQI17P10TU P-CH/100V/16.5A/0.19OHM
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