Fairchild Semiconductor RFP45N06. overview
Fairchild Semiconductor Corporation RFP45N06 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN ...
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Manufactured byFairchild Semiconductor
Product groupModules
DescriptionFairchild Semiconductor Corporation RFP45N06 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:3,DS Breakdown Voltage-Min:60 V,Number of Elements:1,Drain Current-Max (Abs) (ID):45 A,Drain Current-Max (ID):45 A,Drain-source On Resistance-Max:28 m?
DescriptionFAIRCHILD SEMICONDUCTOR RFP45N06. MOSFET Transistor Polarity:N Channel Continuous Drain Current, Id:45A On-Resistance, Rds(on):0.028ohm Package/Case:TO-220 Drain Source On Resistance @ 10V:0.07ohm Drain-Source Breakdown Voltage:-20V RoHS Compliant: No
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| # | Name |
|---|---|
| 1 | RFP45N06 |