Fairchild Semiconductor RFD3055. overview
Fairchild Semiconductor Corporation RFD3055 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN D...
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Manufactured byFairchild Semiconductor
Product groupModules
DescriptionFairchild Semiconductor Corporation RFD3055 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:3,DS Breakdown Voltage-Min:60 V,Number of Elements:1,Drain Current-Max (Abs) (ID):12 A,Drain Current-Max (ID):12 A,Drain-source On Resistance-Max:150 m?
DescriptionFAIRCHILD SEMICONDUCTOR RFD3055. MOSFET Transistor Polarity:N Channel Package/Case:TO-251AA Leaded Process Compatible:No Mounting Type:Through Hole Peak Reflow Compatible (260 C):No Current Rating:12A Voltage Rating:60V RoHS Compliant: No
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| # | Name |
|---|---|
| 1 | RFD3055 |