Fairchild Semiconductor FQD2N50. overview
Fairchild Semiconductor Corporation FQD2N50 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN ...
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Manufactured byFairchild Semiconductor
Product groupModules
DescriptionFairchild Semiconductor Corporation FQD2N50 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:2,DS Breakdown Voltage-Min:500 V,Number of Elements:1,Drain Current-Max (Abs) (ID):1.6 A,Drain Current-Max (ID):1.6 A,Drain-source On Resistance-Max:5.3 ?
DescriptionFAIRCHILD SEMICONDUCTOR FQD2N50. MOSFET, N D-PAK Transistor type:MOSFET Transistor polarity:N Voltage, Vds max:500V Case style:TO-252 (D-Pak) Current, Id cont:1.6A Current, Idm pulse:6.4A Power, Pd:2.5W Resistance, Rds on:5.3R SMD:1 Marking, SMD:FQD2N50 RoHS Compliant: No
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| # | Name |
|---|---|
| 1 | FQD2N50 |