Fairchild Semiconductor FQB55N10. overview
Fairchild Semiconductor Corporation FQB55N10 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN...
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Manufactured byFairchild Semiconductor
Product groupModules
DescriptionFairchild Semiconductor Corporation FQB55N10 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:2,DS Breakdown Voltage-Min:100 V,Number of Elements:1,Drain Current-Max (Abs) (ID):55 A,Drain Current-Max (ID):55 A,Drain-source On Resistance-Max:26 m?
DescriptionFAIRCHILD SEMICONDUCTOR FQB55N10. MOSFET, N D2-PAK Transistor type:MOSFET Transistor polarity:N Voltage, Vds max:100V Case style:TO-263 (D2-Pak) Current, Id cont:55A Current, Idm pulse:220A Power, Pd:155W Resistance, Rds on:0.026R SMD:1 Marking, RoHS Compliant: No
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| # | Name |
|---|---|
| 1 | FQB55N10 |