Fairchild Semiconductor FDU8586 overview
Fairchild Semiconductor Corporation FDU8586 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:3,DS Breakdown Voltage-Min:20 V,Number of Elements:1,Drain Current-Max (Abs) (ID):35 A,Drain Current-Max (ID):35 A,...
What is Fairchild Semiconductor FDU8586?
Fairchild Semiconductor Corporation FDU8586 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:3,DS Breakdown Voltage-Min:20 V,Number of Elements:1,Drain Current-Max (Abs) (ID):35 A,Drain Current-Max (ID):35 A,...
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Manufactured byFairchild Semiconductor
Product groupModules
DescriptionFairchild Semiconductor Corporation FDU8586 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:3,DS Breakdown Voltage-Min:20 V,Number of Elements:1,Drain Current-Max (Abs) (ID):35 A,Drain Current-Max (ID):35 A,Drain-source On Resistance-Max:5.5 m?
Description 1782288907FAIRCHILD SEMICONDUCTOR FDU8586 MOSFET, N I-PAK Transistor type:MOSFET Transistor polarity:N Voltage, Vds max:20V Case style:I-PAK Current, Id cont:35A Current, Idm pulse:354A Power, Pd:77W Resistance, Rds on:0.0055R Capacitance, Ciss typ:1865pF Case RoHS Compliant: Yes
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