Fairchild Semiconductor FDS8670 overview
Fairchild Semiconductor Corporation FDS8670 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN ...
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Manufactured byFairchild Semiconductor
Product groupModules
DescriptionFairchild Semiconductor Corporation FDS8670 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:8,DS Breakdown Voltage-Min:30 V,Number of Elements:1,Drain Current-Max (Abs) (ID):21 A,Drain Current-Max (ID):21 A,Drain-source On Resistance-Max:3.7 m?
DescriptionFAIRCHILD SEMICONDUCTOR FDS8670 MOSFET, N SO-8 Transistor type:MOSFET Transistor polarity:N Voltage, Vds max:30V Case style:SO-8 Current, Id cont:21A Current, Idm pulse:105A Power, Pd:2.5W Resistance, Rds on:0.0037R SMD:1 Power dissipation:2.5W Voltage, RoHS Compliant: Yes
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