Fairchild Semiconductor FDP51N25 overview
Fairchild Semiconductor Corporation FDP51N25 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN ...
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Manufactured byFairchild Semiconductor
Product groupModules
DescriptionFairchild Semiconductor Corporation FDP51N25 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:3,DS Breakdown Voltage-Min:250 V,Number of Elements:1,Drain Current-Max (Abs) (ID):51 A,Drain Current-Max (ID):51 A,Drain-source On Resistance-Max:60 m?
DescriptionFAIRCHILD SEMICONDUCTOR FDP51N25 MOSFET, N TO-220 Transistor type:MOSFET Transistor polarity:N Voltage, Vds max:250V Case style:TO-220 Current, Id cont:51A Current, Idm pulse:204A Power, Pd:320W Resistance, Rds on:0.06R Energy, avalanche repetitive RoHS Compliant: Yes
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