Fairchild Semiconductor FDB6035L. overview
Fairchild Semiconductor Corporation FDB6035L Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN...
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Manufactured byFairchild Semiconductor
Product groupModules
DescriptionFairchild Semiconductor Corporation FDB6035L Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:2,DS Breakdown Voltage-Min:30 V,Number of Elements:1,Drain Current-Max (Abs) (ID):58 A,Drain Current-Max (ID):58 A,Drain-source On Resistance-Max:11 m?
DescriptionFAIRCHILD SEMICONDUCTOR FDB6035L. MOSFET On-Resistance, Rds(on):0.011ohm Package/Case:TO-263 Drain-Source Breakdown Voltage:-55V Gate-Source Voltage:3V Leaded Process Compatible:No Mounting Type:Through Hole Peak Reflow Compatible (260 C):No RoHS Compliant: No
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| # | Name |
|---|---|
| 1 | FDB6035L |