Fairchild Semiconductor FQU6N50C overview
Fairchild Semiconductor Corporation FQU6N50C Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN ...
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Manufactured byFairchild Semiconductor
Product groupModules
DescriptionFairchild Semiconductor Corporation FQU6N50C Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:3,DS Breakdown Voltage-Min:500 V,Number of Elements:1,Drain Current-Max (Abs) (ID):4.5 A,Drain Current-Max (ID):4.5 A,Drain-source On Resistance-Max:1.2 ?
DescriptionFAIRCHILD SEMICONDUCTOR FQU6N50C Integrated Circuit, These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary planar stripe, DMOS technology
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