Fairchild Semiconductor FQNL1N50B overview
Fairchild Semiconductor Corporation FQNL1N50B Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN...
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Manufactured byFairchild Semiconductor
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DescriptionFairchild Semiconductor Corporation FQNL1N50B Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:3,DS Breakdown Voltage-Min:500 V,Number of Elements:1,Drain Current-Max (Abs) (ID):270 mA,Drain Current-Max (ID):270 mA,Drain-source On Resistance-Max:9 ?
DescriptionFAIRCHILD SEMICONDUCTOR FQNL1N50B Integrated Circuit, 500v N-channel Mosfet
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