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FQI9N15

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Fairchild Semiconductor FQI9N15

Fairchild Semiconductor FQI9N15 overview

Fairchild Semiconductor Corporation FQI9N15 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN D...

Part number or familyFQI9N15
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Manufactured byFairchild Semiconductor
Product groupModules
DescriptionFairchild Semiconductor Corporation FQI9N15 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:3,DS Breakdown Voltage-Min:150 V,Number of Elements:1,Drain Current-Max (Abs) (ID):9 A,Drain Current-Max (ID):9 A,Drain-source On Resistance-Max:400 m?
DescriptionFAIRCHILD SEMICONDUCTOR FQI9N15 Integrated Circuit, 150V N-Channel MOSFET

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