Fairchild Semiconductor FQI5N60C overview
Fairchild Semiconductor Corporation FQI5N60C Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN ...
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Manufactured byFairchild Semiconductor
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DescriptionFairchild Semiconductor Corporation FQI5N60C Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:3,DS Breakdown Voltage-Min:600 V,Number of Elements:1,Drain Current-Max (ID):4.5 A,Drain-source On Resistance-Max:2.5 ?
DescriptionFAIRCHILD SEMICONDUCTOR FQI5N60C Integrated Circuit, 600V N-Channel MOSFET
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