Fairchild Semiconductor FQI50N06L overview
Fairchild Semiconductor Corporation FQI50N06L Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN...
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Manufactured byFairchild Semiconductor
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DescriptionFairchild Semiconductor Corporation FQI50N06L Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:3,DS Breakdown Voltage-Min:60 V,Number of Elements:1,Drain Current-Max (Abs) (ID):52.4 A,Drain Current-Max (ID):52.4 A,Drain-source On Resistance-Max:25 m?
DescriptionFAIRCHILD SEMICONDUCTOR FQI50N06L Integrated Circuit, 60V LOGIC N-Channel MOSFET
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