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FQI28N15

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Fairchild Semiconductor FQI28N15

Fairchild Semiconductor FQI28N15 overview

Fairchild Semiconductor Corporation FQI28N15 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN ...

Part number or familyFQI28N15
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Manufactured byFairchild Semiconductor
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DescriptionFairchild Semiconductor Corporation FQI28N15 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:3,DS Breakdown Voltage-Min:150 V,Number of Elements:1,Drain Current-Max (Abs) (ID):28 A,Drain Current-Max (ID):28 A,Drain-source On Resistance-Max:90 m?
DescriptionFAIRCHILD SEMICONDUCTOR FQI28N15 Integrated Circuit, 150V N-Channel MOSFET

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