Fairchild Semiconductor FQI19N10L overview
Fairchild Semiconductor Corporation FQI19N10L Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN...
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Manufactured byFairchild Semiconductor
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DescriptionFairchild Semiconductor Corporation FQI19N10L Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:3,DS Breakdown Voltage-Min:100 V,Number of Elements:1,Drain Current-Max (Abs) (ID):19 A,Drain Current-Max (ID):19 A,Drain-source On Resistance-Max:110 m?
DescriptionFAIRCHILD SEMICONDUCTOR FQI19N10L Integrated Circuit, 100V LOGIC N-Channel MOSFET
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