Fairchild Semiconductor FQI13N50 overview
Fairchild Semiconductor Corporation FQI13N50 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN ...
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Manufactured byFairchild Semiconductor
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DescriptionFairchild Semiconductor Corporation FQI13N50 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:3,DS Breakdown Voltage-Min:500 V,Number of Elements:1,Drain Current-Max (ID):12.5 A,Drain-source On Resistance-Max:430 m?
DescriptionFAIRCHILD SEMICONDUCTOR FQI13N50 Integrated Circuit, 500V N-Channel MOSFET
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