Fairchild Semiconductor FQI11P06 overview
Fairchild Semiconductor Corporation FQI11P06 Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN ...
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Manufactured byFairchild Semiconductor
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DescriptionFairchild Semiconductor Corporation FQI11P06 Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:3,DS Breakdown Voltage-Min:60 V,Number of Elements:1,Drain Current-Max (Abs) (ID):11.4 A,Drain Current-Max (ID):11.4 A,Drain-source On Resistance-Max:175 m?
DescriptionFAIRCHILD SEMICONDUCTOR FQI11P06 Integrated Circuit, 60V P-Channel MOSFET
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