Fairchild Semiconductor FQI11N40C overview
Fairchild Semiconductor Corporation FQI11N40C Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN...
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Manufactured byFairchild Semiconductor
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DescriptionFairchild Semiconductor Corporation FQI11N40C Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:3,DS Breakdown Voltage-Min:400 V,Number of Elements:1,Drain Current-Max (Abs) (ID):10.5 A,Drain Current-Max (ID):10.5 A,Drain-source On Resistance-Max:530 m?
DescriptionFAIRCHILD SEMICONDUCTOR FQI11N40C Integrated Circuit, 400V N-Channel MOSFET
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