Fairchild Semiconductor FQD6N50C overview
Fairchild Semiconductor Corporation FQD6N50C Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN...
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Manufactured byFairchild Semiconductor
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DescriptionFairchild Semiconductor Corporation FQD6N50C Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:2,DS Breakdown Voltage-Min:500 V,Number of Elements:1,Drain Current-Max (ID):4.5 A,Drain-source On Resistance-Max:1.2 ?
DescriptionFAIRCHILD SEMICONDUCTOR FQD6N50C Integrated Circuit, These N-channel Enhancement Mode Power Field Effect Transistors Are Produced Using Fairchild’s Proprietary Planar Stripe, Dmos Technology
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