Fairchild Semiconductor FQD1N60 overview
Fairchild Semiconductor Corporation FQD1N60 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN ...
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Manufactured byFairchild Semiconductor
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DescriptionFairchild Semiconductor Corporation FQD1N60 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:2,DS Breakdown Voltage-Min:600 V,Number of Elements:1,Drain Current-Max (Abs) (ID):1 A,Drain Current-Max (ID):1 A,Drain-source On Resistance-Max:11.5 ?
DescriptionFAIRCHILD SEMICONDUCTOR FQD1N60. MOSFET, N D-PAK Transistor type:MOSFET Transistor polarity:N Voltage, Vds max:600V Case style:TO-252 (D-Pak) Current, Id cont:1A Current, Idm pulse:4A Power, Pd:2.5W Resistance, Rds on:11.5R SMD:1 Marking, SMD:FQD1N60 RoHS Compliant: No
DescriptionFAIRCHILD SEMICONDUCTOR FQD1N60 Integrated Circuit, 600v N-channel Mosfet
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| # | Name |
|---|---|
| 1 | FQD1N60. |