Fairchild Semiconductor FQD10N20 overview
Fairchild Semiconductor Corporation FQD10N20 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN...
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Manufactured byFairchild Semiconductor
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DescriptionFairchild Semiconductor Corporation FQD10N20 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:2,DS Breakdown Voltage-Min:200 V,Number of Elements:1,Drain Current-Max (Abs) (ID):7.6 A,Drain Current-Max (ID):7.6 A,Drain-source On Resistance-Max:360 m?
DescriptionFAIRCHILD SEMICONDUCTOR FQD10N20 Integrated Circuit, 200v Logic N-channel Mosfet
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