Fairchild Semiconductor FQB9N30 overview
Fairchild Semiconductor Corporation FQB9N30 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN ...
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Manufactured byFairchild Semiconductor
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DescriptionFairchild Semiconductor Corporation FQB9N30 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:2,DS Breakdown Voltage-Min:300 V,Number of Elements:1,Drain Current-Max (Abs) (ID):9 A,Drain Current-Max (ID):9 A,Drain-source On Resistance-Max:450 m?
DescriptionFAIRCHILD SEMICONDUCTOR FQB9N30 Integrated Circuit, 300V N-channel QFET
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