Fairchild Semiconductor FQB8P10 overview
Fairchild Semiconductor Corporation FQB8P10 Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN ...
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Manufactured byFairchild Semiconductor
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DescriptionFairchild Semiconductor Corporation FQB8P10 Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:2,DS Breakdown Voltage-Min:100 V,Number of Elements:1,Drain Current-Max (Abs) (ID):8 A,Drain Current-Max (ID):8 A,Drain-source On Resistance-Max:530 m?
DescriptionFAIRCHILD SEMICONDUCTOR FQB8P10 Integrated Circuit, 100v P-channel Mosfet
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