Fairchild Semiconductor FQB6N45 overview
Fairchild Semiconductor Corporation FQB6N45 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN ...
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Manufactured byFairchild Semiconductor
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DescriptionFairchild Semiconductor Corporation FQB6N45 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:2,DS Breakdown Voltage-Min:450 V,Number of Elements:1,Drain Current-Max (Abs) (ID):6.2 A,Drain Current-Max (ID):6.2 A,Drain-source On Resistance-Max:1.1 ?
DescriptionFAIRCHILD SEMICONDUCTOR FQB6N45 Integrated Circuit, 450v N-channel Mosfet
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