Fairchild Semiconductor FQB3N60CTM overview
Fairchild Semiconductor Corporation FQB3N60CTM Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-...
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Manufactured byFairchild Semiconductor
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DescriptionFairchild Semiconductor Corporation FQB3N60CTM Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:2,DS Breakdown Voltage-Min:600 V,Number of Elements:1,Drain Current-Max (Abs) (ID):3 A,Drain Current-Max (ID):3 A,Drain-source On Resistance-Max:3.4 ?
DescriptionFAIRCHILD SEMICONDUCTOR FQB3N60CTM Integrated Circuit, 600V N-Channel MOSFET
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