Fairchild Semiconductor FQB32N12V2 overview
Fairchild Semiconductor Corporation FQB32N12V2 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-...
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Manufactured byFairchild Semiconductor
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DescriptionFairchild Semiconductor Corporation FQB32N12V2 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:2,DS Breakdown Voltage-Min:120 V,Number of Elements:1,Drain Current-Max (ID):32 A,Drain-source On Resistance-Max:50 m?
DescriptionFAIRCHILD SEMICONDUCTOR FQB32N12V2 Integrated Circuit, 120v N-channel Mosfet
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