Fairchild Semiconductor FQB19N20L overview
Fairchild Semiconductor Corporation FQB19N20L Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-I...
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Manufactured byFairchild Semiconductor
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DescriptionFairchild Semiconductor Corporation FQB19N20L Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:2,DS Breakdown Voltage-Min:200 V,Number of Elements:1,Drain Current-Max (Abs) (ID):19.4 A,Drain Current-Max (ID):21 A,Drain-source On Resistance-Max:140 m?
DescriptionFAIRCHILD SEMICONDUCTOR FQB19N20L Integrated Circuit, 200v Logic N_channel Mosfet
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