Fairchild Semiconductor FQB13N10 overview
Fairchild Semiconductor Corporation FQB13N10 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN...
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Manufactured byFairchild Semiconductor
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DescriptionFairchild Semiconductor Corporation FQB13N10 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:2,DS Breakdown Voltage-Min:100 V,Number of Elements:1,Drain Current-Max (Abs) (ID):12.8 A,Drain Current-Max (ID):12.8 A,Drain-source On Resistance-Max:180 m?
DescriptionFAIRCHILD SEMICONDUCTOR FQB13N10 Integrated Circuit, 100v N-channel Mosfet
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