Fairchild Semiconductor FQB10N20 overview
Fairchild Semiconductor Corporation FQB10N20 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN...
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Manufactured byFairchild Semiconductor
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DescriptionFairchild Semiconductor Corporation FQB10N20 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:2,DS Breakdown Voltage-Min:200 V,Number of Elements:1,Drain Current-Max (Abs) (ID):10 A,Drain Current-Max (ID):10 A,Drain-source On Resistance-Max:360 m?
DescriptionFAIRCHILD SEMICONDUCTOR FQB10N20. MOSFET, N D2-PAK Transistor type:MOSFET Transistor polarity:N Voltage, Vds max:200V Case style:TO-263 (D2-Pak) Current, Id cont:10A Current, Idm pulse:40A Power, Pd:87W Resistance, Rds on:0.36R SMD:1 Marking, SMD:FQB10N20 RoHS Compliant: No
DescriptionFAIRCHILD SEMICONDUCTOR FQB10N20 Integrated Circuit, 200v N-channel Mosfet
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| # | Name |
|---|---|
| 1 | FQB10N20. |