Fairchild Semiconductor FQAF7N60 overview
Fairchild Semiconductor Corporation FQAF7N60 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN ...
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Manufactured byFairchild Semiconductor
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DescriptionFairchild Semiconductor Corporation FQAF7N60 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:3,DS Breakdown Voltage-Min:600 V,Number of Elements:1,Drain Current-Max (Abs) (ID):5.7 A,Drain Current-Max (ID):5.7 A,Drain-source On Resistance-Max:1 ?
DescriptionFAIRCHILD SEMICONDUCTOR FQAF7N60 Integrated Circuit, 600V N-channel QFET
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