Fairchild Semiconductor FQAF26N30 overview
Fairchild Semiconductor Corporation FQAF26N30 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN...
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Manufactured byFairchild Semiconductor
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DescriptionFairchild Semiconductor Corporation FQAF26N30 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:3,DS Breakdown Voltage-Min:300 V,Number of Elements:1,Drain Current-Max (Abs) (ID):19 A,Drain Current-Max (ID):19 A,Drain-source On Resistance-Max:135 m?
DescriptionFAIRCHILD SEMICONDUCTOR FQAF26N30 Integrated Circuit, 300V N-channel QFET
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