Fairchild Semiconductor SGM2N60UFTF overview
Fairchild Semiconductor Corporation SGM2N60UFTF IGBT, Collector-Emitter Voltage-Max:600 V, Gate-Emitter Thr Voltage-Max:6.5 V, Collector Current-Max (IC):2.4 A,...
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Manufactured byFairchild Semiconductor
Product groupModules
DescriptionFairchild Semiconductor Corporation SGM2N60UFTF IGBT, Collector-Emitter Voltage-Max:600 V, Gate-Emitter Thr Voltage-Max:6.5 V, Collector Current-Max (IC):2.4 A, Polarity/Channel Type:N-CHANNEL, Surface mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:4, Number of Elements:1
DescriptionFairchild Semiconductor SGM2N60UFTF Discrete Semiconductor Products
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