Fairchild Semiconductor FQU2N60TU overview
Fairchild Semiconductor Corporation FQU2N60TU Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN...
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Manufactured byFairchild Semiconductor
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DescriptionFairchild Semiconductor Corporation FQU2N60TU Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:3,DS Breakdown Voltage-Min:600 V,Number of Elements:1,Drain Current-Max (Abs) (ID):2 A,Drain Current-Max (ID):2 A,Drain-source On Resistance-Max:4.7 ?
DescriptionFAIRCHILD SEMICONDUCTOR FQU2N60TU RAIL / 600V N-Channel QFET RoHS Compliant: Yes
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