Fairchild Semiconductor FQI5N30TU overview
Fairchild Semiconductor Corporation FQI5N30TU Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN...
Manufactured byFairchild Semiconductor
Part number or familyFQI5N30TU
Product typeDiscrete Semiconductor Product
Product details
Manufactured byFairchild Semiconductor
Product typeDiscrete Semiconductor Product
DescriptionFairchild Semiconductor Corporation FQI5N30TU Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:3,DS Breakdown Voltage-Min:300 V,Number of Elements:1,Drain Current-Max (Abs) (ID):5.4 A,Drain Current-Max (ID):5.4 A,Drain-source On Resistance-Max:900 m?
DescriptionFAIRCHILD SEMICONDUCTOR FQI5N30TU RAIL / 300V N-Channel QFET RoHS Compliant: Yes
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Fairchild Semiconductor
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Discrete Semiconductor Product
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