Fairchild Semiconductor FQD2N80TF overview
Fairchild Semiconductor Corporation FQD2N80TF Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-I...
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Manufactured byFairchild Semiconductor
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DescriptionFairchild Semiconductor Corporation FQD2N80TF Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:2,DS Breakdown Voltage-Min:800 V,Number of Elements:1,Drain Current-Max (Abs) (ID):1.8 A,Drain Current-Max (ID):1.8 A,Drain-source On Resistance-Max:6.3 ?
DescriptionFairchild Semiconductor FQD2N80TF Discrete Semiconductor Products
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