Fairchild Semiconductor FQD19N10LTF overview
Fairchild Semiconductor Corporation FQD19N10LTF Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT...
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Manufactured byFairchild Semiconductor
Product groupModules
DescriptionFairchild Semiconductor Corporation FQD19N10LTF Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:2,DS Breakdown Voltage-Min:100 V,Number of Elements:1,Drain Current-Max (Abs) (ID):15.6 A,Drain Current-Max (ID):15.6 A,Drain-source On Resistance-Max:110 m?
DescriptionFairchild Semiconductor FQD19N10LTF Discrete Semiconductor Products
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