Fairchild Semiconductor FQD10N20CTF overview
Fairchild Semiconductor Corporation FQD10N20CTF Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT...
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Manufactured byFairchild Semiconductor
Product groupModules
DescriptionFairchild Semiconductor Corporation FQD10N20CTF Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:2,DS Breakdown Voltage-Min:200 V,Number of Elements:1,Drain Current-Max (Abs) (ID):7.8 A,Drain Current-Max (ID):7.8 A,Drain-source On Resistance-Max:360 m?
DescriptionFAIRCHILD SEMICONDUCTOR FQD10N20CTF N-CH/200V/10A/QFET RoHS Compliant: Yes
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