Fairchild Semiconductor FQB5N50CFTM overview
Fairchild Semiconductor Corporation FQB5N50CFTM Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT...
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Manufactured byFairchild Semiconductor
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DescriptionFairchild Semiconductor Corporation FQB5N50CFTM Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:2,DS Breakdown Voltage-Min:500 V,Number of Elements:1,Drain Current-Max (Abs) (ID):5 A,Drain Current-Max (ID):5 A,Drain-source On Resistance-Max:1.55 ?
DescriptionFairchild Semiconductor FQB5N50CFTM Discrete Semiconductor Products
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