Fairchild Semiconductor FDW2521C overview
Fairchild Semiconductor Corporation FDW2521C Small Signal Field-effect Transistor, Polarity/Channel Type:N-CHANNEL AND P-CHANNEL, Surface Mount:YES, Configurati...
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Manufactured byFairchild Semiconductor
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DescriptionFairchild Semiconductor Corporation FDW2521C Small Signal Field-effect Transistor, Polarity/Channel Type:N-CHANNEL AND P-CHANNEL, Surface Mount:YES, Configuration:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE, Number of Terminals:8, DS Breakdown Voltage-Min:20 V, Number of Elements:2, Drain Current-Max (Abs) (ID):5.5 A, Drain Current-Max (ID):5.5 A, Drain-source On Resistance-Max:21 mΩ
DescriptionFAIRCHILD SEMICONDUCTOR FDW2521C. MOSFET Transistor Polarity:Dual N/P Channel Package/Case:8-TSSOP Drain-Source Breakdown Voltage:20V Leaded Process Compatible:No Mounting Type:Surface Mount Peak Reflow Compatible (260 C):No Power Dissipation:1W RoHS Compliant: No
DescriptionFairchild Semiconductor FDW2521C Discrete Semiconductor Products
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| # | Name |
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| 1 | FDW2521C. |