Fairchild Semiconductor FDR6580 overview
Fairchild Semiconductor Corporation FDR6580 Small Signal Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface mount:YES, Configuration:SINGLE WITH ...
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Manufactured byFairchild Semiconductor
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DescriptionFairchild Semiconductor Corporation FDR6580 Small Signal Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:8, DS Breakdown Voltage-Min:20 V, Number of Elements:1, Drain Current-Max (Abs) (ID):11 A, Drain Current-Max (ID):11.2 A, Drain-source On Resistance-Max:9 mΩ
DescriptionFAIRCHILD SEMICONDUCTOR FDR6580. MOSFET Transistor Polarity:N Channel Continuous Drain Current, Id:11.2A On-Resistance, Rds(on):0.009ohm Package/Case:SuperSOT-8 Drain-Source Breakdown Voltage:-100V Gate-Source Voltage:1.5V Leaded Process Compatible:No RoHS Compliant: No
DescriptionFairchild Semiconductor FDR6580 Discrete Semiconductor Products
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| # | Name |
|---|---|
| 1 | FDR6580. |