Fairchild Semiconductor FDG316P overview
Fairchild Semiconductor Corporation FDG316P Small Signal Field-effect Transistor, Polarity/Channel Type:P-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH ...
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Manufactured byFairchild Semiconductor
Product groupModules
DescriptionFairchild Semiconductor Corporation FDG316P Small Signal Field-effect Transistor, Polarity/Channel Type:P-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:6, DS Breakdown Voltage-Min:30 V, Number of Elements:1, Drain Current-Max (Abs) (ID):1.6 A, Drain Current-Max (ID):1.6 A, Drain-source On Resistance-Max:190 mΩ
DescriptionFAIRCHILD SEMICONDUCTOR FDG316P. MOSFET Transistor Polarity:P Channel Continuous Drain Current, Id:1.6A On-Resistance, Rds(on):0.19ohm Package/Case:6-SC-70 Drain-Source Breakdown Voltage:-200V Leaded Process Compatible:No Peak Reflow Compatible (260 C):No RoHS Compliant: No
DescriptionFairchild Semiconductor FDG316P Discrete Semiconductor Products
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| # | Name |
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| 1 | FDG316P. |